Temperature dependence of the dielectric functions and the critical points of InSb by spectroscopic ellipsometry from 31 to 675K

被引:23
作者
Kim, Tae Jung [1 ]
Hwang, Soon Yong
Byun, Jun Seok
Diware, Mangesh S.
Choi, Junho
Park, Han Gyeol
Kim, Young Dong
机构
[1] Kyung Hee Univ, Nanoopt Property Lab, Seoul 130701, South Korea
关键词
INP; SEMICONDUCTORS; PARAMETERS; LASERS; GAAS; GE; SI;
D O I
10.1063/1.4820765
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the complex dielectric function of InSb for temperatures from 31 to 675K and energies from 0.74 to 6.42 eV. The spectra were obtained by rotating-compensator spectroscopic ellipsometry on bulk InSb. The critical point (CP) energies were determined using numerically calculated second energy derivatives of the data. At low temperature, the CP structures are blue-shifted and significantly sharpened relative to those seen at high temperature. The temperature dependence of the E-1, E-1+Delta(1), E-0', Delta(cu)(5)-Delta(vu)(5) (0.35, 0, 0), E-0'+Delta(0)', Delta(cl)(5)-Delta(vu)(5) (0.35, 0, 0), E-2, E-2', E-2+Delta(2), E-2'+Delta(2), E-1', E-1'+Delta(1)', and E-1'+Delta(1)'+Delta(1) CPs was determined by fitting to a phenomenological expression that contains the Bose-Einstein statistical factor or to a linear equation. In particular, temperature dependences of CPs below 100K and those of the E-0', E-0'+Delta(0)', E-2', E-2+Delta(2), E-2'+Delta(2), E-1'+Delta(1)', and E-1'+Delta(1)'+Delta(1) transitions have not previously been reported. (C) 2013 AIP Publishing LLC.
引用
收藏
页数:5
相关论文
共 21 条
[1]  
[Anonymous], RC2
[2]   Mid-infrared In1-xAlxSb/InSb heterostructure diode lasers [J].
Ashley, T ;
Elliott, CT ;
Jefferies, R ;
Johnson, AD ;
Pryce, GJ ;
White, AM ;
Carroll, M .
APPLIED PHYSICS LETTERS, 1997, 70 (08) :931-933
[3]   CHEMICAL ETCHING AND CLEANING PROCEDURES FOR SI, GE, AND SOME III-V COMPOUND SEMICONDUCTORS [J].
ASPNES, DE ;
STUDNA, AA .
APPLIED PHYSICS LETTERS, 1981, 39 (04) :316-318
[4]   DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1983, 27 (02) :985-1009
[5]  
Cardona M., 1969, SOLID STATE PHYS, V11
[6]   NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 14 (02) :556-582
[7]   TEMPERATURE-DEPENDENCE OF THE SHIFTS AND BROADENINGS OF THE CRITICAL-POINTS IN GAAS [J].
GOPALAN, S ;
LAUTENSCHLAGER, P ;
CARDONA, M .
PHYSICAL REVIEW B, 1987, 35 (11) :5577-5584
[8]   OPTICAL-CONSTANTS OF IN1-CHI-GA-CHI-SB TERNARY ALLOYS - EXPERIMENT AND MODELING [J].
IMAI, S ;
ADACHI, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9A) :3860-3865
[9]   Type II transition in InSb-based nanostructures for midinfrared applications [J].
Intartaglia, R. ;
Raino, G. ;
Tasco, V. ;
Della Sala, F. ;
Cingolani, R. ;
Baranov, A. N. ;
Deguffroy, N. ;
Tournie, E. ;
Satpati, B. ;
Trampert, A. ;
De Giorgi, M. .
JOURNAL OF APPLIED PHYSICS, 2008, 103 (11)
[10]   A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy [J].
Ivanov, SV ;
Kaygorodov, VA ;
Sorokin, SV ;
Meltser, BY ;
Solov'ev, VA ;
Terent'ev, YV ;
Lyublinskaya, OG ;
Moiseev, KD ;
Grebenshchikova, EA ;
Mikhailova, MP ;
Toropov, AA ;
Yakovlev, YP ;
Kop'ev, PS ;
Alferov, ZI .
APPLIED PHYSICS LETTERS, 2003, 82 (21) :3782-3784