Direct Bonding of Diamond and Si Substrates at Low Temperatures Under Atmospheric Conditions

被引：2

作者：

Matsumae, Takashi ^{[1
]}

Kurashima, Yuichi ^{[1
]}

Umezawa, Hitoshi ^{[2
]}

Takagi, Hideki ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Res Ctr Ubiquitous MEMS & Micro Engn, Tsukuba, Ibaraki, Japan

[2] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, Ikeda, Osaka, Japan

来源：

2020 IEEE 70TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2020) | 2020年

关键词：

Diamond; Direct bonding; Low-temperature bonding; Damage-free layer transfer; SILICON;

D O I：

10.1109/ECTC32862.2020.00227

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study demonstrated a strong direct bonding of diamond and Si substrates at low temperatures. A diamond (111) substrate treated with H2SO4/H2O2 and NH3/H2O2/H2O mixtures achieved the shear strength of 35 MPa with an oxygen-plasma-activated Si substrate. The NH3/H2O2/H2O cleaning efficiently removed the residual sulfuric acid molecules on the diamond surface. The interfacial analysis revealed that the diamond and SiO2 surfaces were atomically bonded without void, crack, and severe crystallinity damage. We believe that the proposed bonding technique would facilitate to diamond-based devices because high-crystallinity diamond layers can be transferred on support substrates by uncomplicated procedures consisting of the commonly used cleaning, contacting surfaces under atmospheric conditions, and low-temperature annealing.

引用

页码：1436 / 1441

页数：6

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