Dependence of ESR on electronic structure of GdPdX intermetallics for X = p-type element

The ESR measurements, performed well above the ordering temperature of the investigated GdPdX compounds showed that the bottleneck effect depends on the X element. The obtained results, supported by the XPS investigation revealed that increasing the density of states at the Fermi level due to the p-type electrons causes strengthening of the bottleneck effect and accumulation of energy in conduction electron system. The observed effects exceed the values observed in other GdTX ternary systems. This result is contrary to breaking the bottleneck caused by the increasing of density of states at the Fermi level due to the d-type electrons coming from T metals in GdTAl compounds [J. Jarosz, E. Talik, J. Alloys Compd. 317-318(2001)385-389]. (c) 2006 Elsevier B.V. All rights reserved.