Depth profile investigation of β-FeSi2 formed in Si(100) by high fluence implantation of 50 keV Fe ion and post-thermal vacuum annealing

被引：4

作者：

Lakshantha, Wickramaarachchige J. ^{[1
]}

Kummari, Venkata C. ^{[1
]}

Reinert, Tilo ^{[1
]}

McDaniel, Floyd D. ^{[1
]}

Rout, Bibhudutta ^{[1
,2
]}

机构：

[1] Univ N Texas, Ion Beam Modificat & Anal Lab, Dept Phys, Denton, TX 76203 USA

[2] Univ N Texas, Ctr Adv Res & Technol, Denton, TX 76207 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2014年 / 332卷

关键词：

Ion implantation; beta-FeSi2; T-DYN; TRIM; RBS; SI; SIMULATION; SILICIDES; SI(111); FILMS;

D O I：

10.1016/j.nimb.2014.02.024

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A single phase polycrystalline beta-FeSi2 layer has been synthesized at the near surface region by implantation in Si(100) of a high fluence (similar to 10(17) atoms/cm(2)) of 50 keV Fe ions and subsequent thermal annealing in vacuum at 800 degrees C. The depth profile of the implanted Fe atoms in Si(100) were simulated by the widely used transportation of ions in matter (TRIM) computer code as well as by the dynamic transportation of ions in matter code (T-DYN). The simulated depth profile predictions for this heavy ion implantation process were experimentally verified using Rutherford Backscattering Spectrometry (RBS) and X-ray Photoelectron Spectroscopy (XPS) in combination with Ar-ion etching. The formation of the beta-FeSi2 phase was monitored by X-ray diffraction measurements. The T-DYN simulations show better agreement with the experimental Fe depth profile results than the static TRIM simulations. The experimental and T-DYN simulated results show an asymmetric distribution of Fe concentrated more toward the surface region of the Si substrate. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：33 / 36

页数：4

共 23 条

[1] Preparation of β-FeSi2 thin film by metal organic chemical vapor deposition using iron-carbonyl and mono-silane [J].

Akiyama, K ;

Ohya, S ;

Funakubo, H .

THIN SOLID FILMS, 2004, 461 (01) :40-43

[2] Microstructure of β-FeSi2 buried layers synthesis by ion implantation [J].

Ayache, R ;

Richter, E ;

Bouabellou, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 216 :137-142

[3] HIGH-RESOLUTION ELECTRON-MICROSCOPY STUDY OF ALPHA-FESI2 HETEROEPITAXY ON SI(111) [J].

BERBEZIER, I ;

CHEVRIER, J ;

DERRIEN, J .

SURFACE SCIENCE, 1994, 315 (1-2) :27-39

[4] TRIM-DYNAMIC applied to marker broadening and SIMS depth profiling [J].

Biersack, J .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 153 (1-4) :398-409

[5] A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS [J].

BIERSACK, JP ;

HAGGMARK, LG .

NUCLEAR INSTRUMENTS & METHODS, 1980, 174 (1-2) :257-269

[6] Semiconducting beta-phase FeSi2 for light emitting diode applications: Recent developments, challenges, and solutions [J].

Chi, D. Z. .

THIN SOLID FILMS, 2013, 537 :1-22

[7]

CHU K, 1978, BACKSCATTERING SPECT, P42010

[8] Metastable iron silicide phase formation by pulsed laser annealing [J].

Comrie, CM ;

Falepin, A ;

Richard, O ;

Bender, H ;

Vantomme, A .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (05) :2365-2370

[9] Ion beam induced mixing of co-sputtered Au-Ni films analyzed by Rutherford backscattering spectrometry [J].

Datta, D. ;

Bhattacharyya, S. R. .

APPLIED SURFACE SCIENCE, 2008, 255 (05) :2075-2079

[10] COMPUTER-SIMULATION OF 2-COMPONENT TARGET SPUTTERING [J].

ECKSTEIN, W ;

BIERSACK, JP .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 37 (02) :95-108

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