Effect of partial filling of the structural vacant sites on the thermoelectric properties of Zr0.25Hf0.75NiSn half-Heusler alloy

被引：0

作者：

Makongo, Julien P. A. ^{[1
]}

Misra, Dinesh K. ^{[1
]}

Takas, Nathan ^{[1
]}

Stokes, Kevin ^{[1
,2
]}

Gabrisch, Heike ^{[1
,3
]}

Poudeu, Pierre F. P. ^{[1
,3
]}

机构：

[1] Univ New Orleans, Adv Mat Res Inst, New Orleans, LA 70148 USA

[2] Univ New Orleans, Dept Phys, New Orleans, LA 70148 USA

[3] Univ New Orleans, Dept Chem, New Orleans, LA 70148 USA

来源：

THERMOELECTRIC MATERIALS 2010 - GROWTH, PROPERTIES, NOVEL CHARACTERIZATION METHODS AND APPLICATIONS | 2010年 / 1267卷

关键词：

ZRNISN; TINISN;

D O I：

10.1557/PROC-1267-DD05-12

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Composites containing mainly-half-Heusler MNiSn (HH) and full-Heusler MNi2Sn (FH) were prepared by solid state reaction of a mixture of polycrystalline bulk HH alloy with various concentrations of Ni up to 10 wt.%. Electrical conductivities, thermal conductivities and thermopowers of spark plasma sintered specimens of the as synthesized composite materials were measured in the temperature range from 300 K to 750 K. The conduction type of the composite changes from semiconductor to semimetal for Ni concentrations up to 2 wt.% and from semimetal to metal for higher Ni concentrations above 5 wt.%. A strong reduction in lattice thermal conductivity was observed for the composite containing 10 wt. % Ni inclusions.

引用

页数：6

共 12 条

[1] NARROW-BAND IN THE INTERMETALLIC COMPOUNDS TINISN, ZRNISN, HFNISN [J].

ALIEV, FG ;

KOZYRKOV, VV ;

MOSHCHALKOV, VV ;

SCOLOZDRA, RV ;

DURCZEWSKI, K .

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1990, 80 (03) :353-357

[2] GAP AT THE FERMI LEVEL IN THE INTERMETALLIC VACANCY SYSTEM TINISN, ZRNISN, HFNISN [J].

ALIEV, FG ;

BRANDT, NB ;

MOSHCHALKOV, VV ;

KOZYRKOV, VV ;

SKOLOZDRA, RV ;

BELOGOROKHOV, AI .

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1989, 75 (02) :167-171

[3] THE USE OF SEMICONDUCTORS IN THERMOELECTRIC REFRIGERATION [J].

GOLDSMID, HJ ;

DOUGLAS, RW .

BRITISH JOURNAL OF APPLIED PHYSICS, 1954, 5 (NOV) :386-390

[4] Efficient dopants for ZrNiSn-based thermoelectric materials [J].

Hohl, H ;

Ramirez, AP ;

Goldmann, C ;

Ernst, G ;

Wölfing, B ;

Bucher, E .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1999, 11 (07) :1697-1709

[5] Phonon scattering cross section of polydispersed spherical nanoparticles [J].

Kim, Woochul ;

Majumdar, Arun .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (08)

[6] TEM observation of coexistent Heusler and half-Heusler phases [J].

Morimura, Takao ;

Hasaka, Masayuki ;

Yoshimoto, Masato .

JOURNAL OF ALLOYS AND COMPOUNDS, 2006, 416 (1-2) :155-159

[7]

Poon SJ, 2001, SEMICONDUCT SEMIMET, V70, P37

[8]

Romaka VA, 2007, UKR J PHYS, V52, P39

[9] Effects of partial substitution of Ni by Pd on the thermoelectric properties of ZrNiSn-based half-Heusler compounds [J].

Shen, Q ;

Chen, L ;

Goto, T ;

Hirai, T ;

Yang, J ;

Meisner, GP ;

Uher, C .

APPLIED PHYSICS LETTERS, 2001, 79 (25) :4165-4167

[10] Electronic structure of transition metal-doped XNiSn and XCoSb (X = Hf, Zr) phases in the vicinity of the band gap [J].

Simonson, J. W. ;

Poon, S. J. .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2008, 20 (25)

← 1 2 →