Possible superconductivity in multi-layer-graphene by application of a gate voltage

被引：9

作者：

Ballestar, A. ^{[1
]}

Esquinazi, P. ^{[1
]}

Barzola-Quiquia, J. ^{[1
]}

Dusari, S. ^{[1
]}

Bern, F. ^{[1
]}

da Silva, R. R. ^{[2
]}

Kopelevich, Y. ^{[2
]}

机构：

[1] Univ Leipzig, Inst Expt Phys 2, Div Superconduct & Magnetism, D-04103 Leipzig, Germany

[2] Univ Estadual Campinas, UNICAMP, Inst Fis Gleb Wataghin DFA, BR-13083859 Bairro Barao Geraldo, Brazil

来源：

CARBON | 2014年 / 72卷

基金：

巴西圣保罗研究基金会;

关键词：

ROOM-TEMPERATURE; GRAPHITE; TRANSPORT; TRANSITION;

D O I：

10.1016/j.carbon.2014.02.011

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The carrier density in tens of nanometers thick graphite samples (multi-layer-graphene, MLG) has been modified by applying a gate voltage (V-g) perpendicular to the graphene planes. Surface potential microscopy shows inhomogeneities in the carrier density (n) in the sample near surface region and under different values of V-g at room temperature. Transport measurements on different MLG samples reveal that under a large enough applied electric field these regions undergo a superconducting-like transition at T less than or similar to 17K. A magnetic field applied parallel or normal to the graphene layers suppresses the transition without changing appreciably the transition temperature. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：312 / 320

页数：9

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