Possible superconductivity in multi-layer-graphene by application of a gate voltage

被引：9
作者：
Ballestar, A. [1 ]
Esquinazi, P. [1 ]
Barzola-Quiquia, J. [1 ]
Dusari, S. [1 ]
Bern, F. [1 ]
da Silva, R. R. [2 ]
Kopelevich, Y. [2 ]
机构：
[1] Univ Leipzig, Inst Expt Phys 2, Div Superconduct & Magnetism, D-04103 Leipzig, Germany
[2] Univ Estadual Campinas, UNICAMP, Inst Fis Gleb Wataghin DFA, BR-13083859 Bairro Barao Geraldo, Brazil
来源：
CARBON | 2014年 / 72卷
基金：
巴西圣保罗研究基金会;
关键词：
ROOM-TEMPERATURE; GRAPHITE; TRANSPORT; TRANSITION;
D O I：
10.1016/j.carbon.2014.02.011
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The carrier density in tens of nanometers thick graphite samples (multi-layer-graphene, MLG) has been modified by applying a gate voltage (V-g) perpendicular to the graphene planes. Surface potential microscopy shows inhomogeneities in the carrier density (n) in the sample near surface region and under different values of V-g at room temperature. Transport measurements on different MLG samples reveal that under a large enough applied electric field these regions undergo a superconducting-like transition at T less than or similar to 17K. A magnetic field applied parallel or normal to the graphene layers suppresses the transition without changing appreciably the transition temperature. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码：312 / 320
页数：9
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