Cu2ZnSnS4 photovoltaic cell with improved efficiency fabricated by high-temperature annealing after CdS buffer-layer deposition

被引：102

作者：

Tajima, Shin ^{[1
]}

Umehara, Mitsutaro ^{[1
]}

Hasegawa, Masaki ^{[1
]}

Mise, Takahiro ^{[1
]}

Itoh, Tadayoshi ^{[1
]}

机构：

[1] Toyota Cent Res & Dev Labs Inc, 41-1 Yokomichi, Nagakute, Aichi 4801192, Japan

来源：

PROGRESS IN PHOTOVOLTAICS | 2017年 / 25卷 / 01期

关键词：

CZTS; CdS; post-annealing; photovoltaics; thin films; FILM SOLAR-CELLS; CONDUCTION-BAND OFFSET; PERFORMANCE;

D O I：

10.1002/pip.2837

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

To improve the photovoltaic properties of Cu2ZnSnS4 (CZTS) cells, we investigated the effect of both the thickness of the deposited CdS layers and the post-annealing temperature following CdS deposition on the photovoltaic properties of CZTS cells using a two-layer CZTS structure. By depositing a thin CdS layer (40nm) followed by high temperature annealing (603K), we observed a remarkable increase in the short-circuit current density because of the enhancement of the external quantum efficiency in the wavelength range of 400-800nm. The best CZTS cell exhibited a conversion efficiency of 9.4% in the active area (9.1% in the designated area). In addition, we also fabricated a CZTS cell with open-circuit voltage of 0.80V by appropriately tuning the composition of the CZTS layers. Copyright (c) 2016 John Wiley & Sons, Ltd.

引用

页码：14 / 22

页数：9

共 44 条

[31] Epitaxial growth of kesterite Cu2ZnSnS4 on a Si(001) substrate by thermal co-evaporation [J].

Shin, Byungha ;

Zhu, Yu ;

Gershon, Talia ;

Bojarczuk, Nestor A. ;

Guha, Supratik .

THIN SOLID FILMS, 2014, 556 :9-12

[32]

Sugimoto H., 2013, 2013IEEEPVSC72313061

[33]

Sugimoto H., 2013, P PVSC 39

[34] Atom-probe tomographic study of interfaces of Cu2ZnSnS4 photovoltaic cells [J].

Tajima, S. ;

Asahi, R. ;

Isheim, D. ;

Seidman, D. N. ;

Itoh, T. ;

Hasegawa, M. ;

Ohishi, K. .

APPLIED PHYSICS LETTERS, 2014, 105 (09)

[35] Cu2ZnSnS4 photovoltaic cell with improved efficiency fabricated by high-temperature annealing after CdS buffer-layer deposition [J].

Tajima, Shin ;

Umehara, Mitsutaro ;

Hasegawa, Masaki ;

Mise, Takahiro ;

Itoh, Tadayoshi .

PROGRESS IN PHOTOVOLTAICS, 2017, 25 (01) :14-22

[36] Improvement of the open-circuit voltage of Cu2ZnSnS4 solar cells using a two-layer structure [J].

Tajima, Shin ;

Itoh, Tadayoshi ;

Hazama, Hirofumi ;

Ohishi, Keiichiro ;

Asahi, Ryoji .

APPLIED PHYSICS EXPRESS, 2015, 8 (08)

[37] Direct measurement of band offset at the interface between CdS and Cu2ZnSnS4 using hard X-ray photoelectron spectroscopy [J].

Tajima, Shin ;

Kataoka, Keita ;

Takahashi, Naoko ;

Kimoto, Yasuji ;

Fukano, Tatsuo ;

Hasegawa, Masaki ;

Hazama, Hirofumi .

APPLIED PHYSICS LETTERS, 2013, 103 (24)

[38] Temperature Dependence of Cu2ZnSnS4 Photovoltaic Cell Properties [J].

Tajima, Shin ;

Katagiri, Hironori ;

Jimbo, Kazuo ;

Sugimoto, Noriaki ;

Fukano, Tatsuo .

APPLIED PHYSICS EXPRESS, 2012, 5 (08)

[39] Characterization of electronic structure of Cu2ZnSn(SxSe1-x)4 absorber layer and CdS/Cu2ZnSn(SxSe1-x)4 interfaces by in-situ photoemission and inverse photoemission spectroscopies [J].

Terada, Norio ;

Yoshimoto, Sho ;

Chochi, Kosuke ;

Fukuyama, Takayuki ;

Mitsunaga, Masahiro ;

Tampo, Hitoshi ;

Shibata, Hajime ;

Matsubara, Koji ;

Niki, Shigeru ;

Sakai, Noriyuki ;

Katou, Takuya ;

Sugimoto, Hiroki .

THIN SOLID FILMS, 2015, 582 :166-170

[40] Improvement of red light response of Cu2Sn1-xGexS3 solar cells by optimization of CdS buffer layers [J].

Umehara, Mitsutaro ;

Takeda, Yasuhiko ;

Tajima, Shin ;

Motohiro, Tomoyoshi ;

Sakai, Takenobu ;

Maekawa, Ryosuke .

JOURNAL OF APPLIED PHYSICS, 2015, 118 (15)

← 1 2 3 4 5 →