Cu2ZnSnS4 photovoltaic cell with improved efficiency fabricated by high-temperature annealing after CdS buffer-layer deposition

被引：102

作者：

Tajima, Shin ^{[1
]}

Umehara, Mitsutaro ^{[1
]}

Hasegawa, Masaki ^{[1
]}

Mise, Takahiro ^{[1
]}

Itoh, Tadayoshi ^{[1
]}

机构：

[1] Toyota Cent Res & Dev Labs Inc, 41-1 Yokomichi, Nagakute, Aichi 4801192, Japan

来源：

PROGRESS IN PHOTOVOLTAICS | 2017年 / 25卷 / 01期

关键词：

CZTS; CdS; post-annealing; photovoltaics; thin films; FILM SOLAR-CELLS; CONDUCTION-BAND OFFSET; PERFORMANCE;

D O I：

10.1002/pip.2837

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

To improve the photovoltaic properties of Cu2ZnSnS4 (CZTS) cells, we investigated the effect of both the thickness of the deposited CdS layers and the post-annealing temperature following CdS deposition on the photovoltaic properties of CZTS cells using a two-layer CZTS structure. By depositing a thin CdS layer (40nm) followed by high temperature annealing (603K), we observed a remarkable increase in the short-circuit current density because of the enhancement of the external quantum efficiency in the wavelength range of 400-800nm. The best CZTS cell exhibited a conversion efficiency of 9.4% in the active area (9.1% in the designated area). In addition, we also fabricated a CZTS cell with open-circuit voltage of 0.80V by appropriately tuning the composition of the CZTS layers. Copyright (c) 2016 John Wiley & Sons, Ltd.

引用

页码：14 / 22

页数：9

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