A Novel High-Density and Low-Power Ternary Content Addressable Memory Design Based on 3D NAND Flash

被引：0
|
作者：
Yang, H. Z. [1 ]
Huang, P. [1 ]
Han, R. Z. [1 ]
Xiang, Y. C. [1 ]
Feng, Y. [2 ]
Gao, B. [3 ]
Chen, J. Z. [2 ]
Liu, L. F. [1 ]
Liu, X. Y. [1 ]
Kang, J. F. [1 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
[2] Shandong Univ, Sch Informat Sci & Engn, Qingdao 250100, Peoples R China
[3] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China
来源：
2020 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) | 2020年
基金：
中国国家自然科学基金;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel ternary content addressable memory (TCAM) design based on 3D NAND Flash is proposed, in which two adjacent flash cells consist of one TCAM cell. HSPICE simulations show that the proposed TCAM has the ultra-low energy consumption of 0.298 fJ/bit/search for a 64-bit word and the cell density with 96-layer 3D NAND is reduced similar to 582 times compared to the conventional CMOS-based TCAMs.
引用
收藏
页码：39 / 40
页数：2
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