XPS calibration study of thin-film nickel silicides

被引：75
作者：
Cao, Yu [1 ]
Nyborg, Lars [1 ]
Jelvestam, Urban [1 ]
机构：
[1] Chalmers, Dept Mat & Mfg Technol, SE-41296 Gothenburg, Sweden
来源：
SURFACE AND INTERFACE ANALYSIS | 2009年 / 41卷 / 06期
关键词：
Ni silicides; XPS; Wagner plot; Auger parameter; core level; depth profile; SI BINARY-SYSTEM; ELECTRONIC-STRUCTURE; DIFFUSION COUPLES; NI; SILICON; EVOLUTION; SPECTRA; STABILITY; COMPOUND; ALLOYS;
D O I：
10.1002/sia.3050
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
This paper presents a systematic X-ray photoelectron spectroscopy (XPS)study of the Ni silicides Ni(3)Si, Ni(31)Si(12), Ni(2)Si, NiSi and NiSi(2) produced by annealing of sputtered thin films. The in situ XPS study focuses on both the core level peaks and Auger peaks. The peak positions, shapes, satellites as well as Auger parameters are compared for different silicides. The factors that influence the Ni core level peak shifts are discussed. The Ni 2p(3/2) peak shape and satellites are correlated with the valence band structure. The effect of argon ion etching on surface composition and chemical states is also investigated. Copyright (C) 2009 John Wiley & Sons, Ltd.
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收藏
页码：471 / 483
页数：13
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