GaN RF Device Technology and Applications, Present and Future

被引：0

作者：

Green, Bruce ^{[1
]}

Moore, Karen ^{[1
]}

Hill, Darrell ^{[1
]}

CdeBaca, Monica ^{[1
]}

Schultz, Joe ^{[1
]}

机构：

[1] Freescale Semicond, RF, Tempe, AZ 85284 USA

来源：

2013 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2013年

关键词：

GaN; SiC; Power Amplifier;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Over the last decade, Gallium Nitride (GaN) has emerged as a mainstream RF technology with disruptive performance potential. Here, we present GaN technology in the context of current commercial RF communications applications as well as future applications. We show state of the art >200W, >75% efficient packaged device performance at 2.14 GHz using a 0.6 pm 48 V technology and apply the device technology to a 400 W ultra-small footprint Doherty power amplifier. We also describe extending the 0.6 pm technology to a 0.2 pm gate length that allows for higher fT that will enable future technology for high-efficiency switch-mode amplifiers.

引用

页码：101 / 106

页数：6

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