X-ray reflectivity study of formation of multilayer porous anodic oxides of silicon

被引：4

作者：

Parkhutik, V ^{[1
]}

Chu, Y

You, H

Nagy, Z

Montano, PA

机构：

[1] Univ Politecn Valencia, Valencia 46071, Spain

[2] Argonne Natl Lab, MSD, Argonne, IL 60439 USA

来源：

JOURNAL OF POROUS MATERIALS | 2000年 / 7卷 / 1-3期

关键词：

X-ray reflectivity; anodic oxide; oscillations;

D O I：

10.1023/A:1009679432364

中图分类号：

O69 [应用化学];

学科分类号：

081704 ;

摘要：

Present work reports a study of the morphology of thin (50-600 Angstrom) porous oxides of silicon grown in a special regime of the oscillating anodic potential. X-ray reflectivity (in-situ and ex-situ) was applied to analyze the morphology of oxides. It has been established that there is a direct correlation between a number of oscillations of potential during the oxide growth and the structure of oxide: it has a multi-layer structure with the number of layers corresponding to the number of oscillations. The results are interpreted using the model of the porous structures formation which explains the oscillatory oxide formation kinetics in terms of alternating processes of oxide formation and dissolution.

引用

页码：27 / 31

页数：5

共 7 条

[1]

FAHIDY TZ, 1995, MOD ASPECT ELECTROC, V27, P383

[2] On the origin of electrochemical oscillations at silicon electrodes [J].