Impurity binding energy of excited states in spherical quantum dot

被引：57

作者：

Sadeghi, E. ^{[1
]}

机构：

[1] Univ Yasuj, Dept Phys, Yasuj 75914353, Iran

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2009年 / 41卷 / 07期

关键词：

Impurity energy; Turning point; Normalized binding energy; ELECTRIC-FIELD; PERTURBATION CALCULATION; WELL WIRES; CONFINEMENT;

D O I：

10.1016/j.physe.2009.03.004

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Effect of external electric field on the excited state energies in a spherical quantum dot is considered. The impurity energy and normalized binding energy are calculated using variational method within the effective mass approximation and finite barrier potential. The results show the energies decrease with increasing strength of electric field. The results obtained by this method are compared with the previous investigations. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1319 / 1322

页数：4

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