Determination of Thermal Stability of Magnetic Tunnel Junction Using Time-Resolved Single-Shot Measurement

被引：5
作者：
Chao, C. T. [1 ]
Kuo, C. Y. [1 ]
Horng, Lance [1 ]
Tsunoda, M. [2 ]
Takahashi, M. [2 ]
Wu, J. C. [1 ]
机构：
[1] Natl Changhua Univ Educ, Dept Phys, Changhua, Taiwan
[2] Tohoku Univ, Dept Elect Engn, Sendai, Miyagi 980, Japan
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2014年 / 50卷 / 01期
关键词：
Current-induced magnetization switching (CIMS); magnetic tunnel junction (MTJ); time-resolved;
D O I：
10.1109/TMAG.2013.2276418
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Time-resolved single-shot measurement has been investigated to characterize switching times of the free layer in magnetic tunneling junctions (MTJs). In this study, a stacked MTJ film is patterned into an elongated, nano-scale device using standard electron beam lithography in conjunction with ion beam etching. Subsequently, current-induced magnetization switching is initiated using a single-shot measurement based on the time-domain transmission method. A current pulse with a duration of 50 ns is utilized to switch the magnetization configuration between parallel and anti-parallel states. After the pulse rises, the transmission profile shows a transition in which resistance varies. That is, the incubation time between pulse onset and resistance change represents the switching time of the free layer. The statistical distribution results of the switching times are obtained. The switching times are strongly dependent on current density and the external magnetic field. By fitting the data points using the Neel-Arrhenius law, the thermal stability factor Delta and intrinsic current density J(C0) are also determined.
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页数：4
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