Anisotropic scaling of ripple morphologies on high-fluence sputtered silicon

被引：42
|
作者：
Keller, Adrian [1 ]
Cuerno, Rodolfo [2 ,3 ]
Facsko, Stefan [1 ]
Moeller, Wolfhard [1 ]
机构：
[1] Rossendorf Inc, Forschungszentrum, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
[2] Univ Carlos III Madrid, GISC, E-28911 Leganes, Spain
[3] Univ Carlos III Madrid, Dept Matemat, E-28911 Leganes, Spain
来源：
PHYSICAL REVIEW B | 2009年 / 79卷 / 11期
关键词：
atomic force microscopy; elemental semiconductors; nanostructured materials; silicon; sputtering; surface morphology; surface roughness; surface treatment; KURAMOTO-SIVASHINSKY EQUATION; ION-BOMBARDED SI(001); ROUGHENING INSTABILITY; SURFACE; EROSION; EVOLUTION;
D O I：
10.1103/PhysRevB.79.115437
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The evolution of Si(100) surfaces has been studied during oblique high-fluence ion sputtering by means of atomic force microscopy. The observed surface morphology is dominated by nanoscale ripples and kinetic roughening at small and large lateral scales, respectively. The large-scale morphology exhibits anisotropic scaling at high fluences with different roughness exponents alpha(n)=0.76 +/- 0.04 and alpha(p)=0.41 +/- 0.04 in the directions normal and parallel to the incident ion beam, respectively. Comparison to the predictions of single field and two-field ("hydrodynamic") models of ion erosion suggests the relevance of nonlinearities that are not considered in the simpler anisotropic Kuramoto-Sivashinsky equation.
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页数：7
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