Side-wall measurement using tilt-scanning method in atomic force microscope

We have developed a novel atomic force microscope (AFM) measurement technique which can examine sidewalls of fine patterns on wafers. This technique uses a sharpen tip tilted at an angle in combination with digital probing mode operation, and is thus referred as "tilt-step-in" mode operation. This method allows one to measure sidewall shape moving along tilted tip axis. We analyzed the slip condition between the tip and the sample using a simple spring-mass system model and finite element method (FEM) with several parameters, such as moving direction, stiffness of tip and cantilever, sidewall angle and frictional coefficient. To verify this method, we then measured several reference samples with perpendicular sidewalls and 105 degrees undercuts. By using this technique three dimensional (3-D) images of low-k etch structure of semiconductor device patterns with 88 degrees sidewall and line edge roughness of ArF resist were clearly observed.