Sub-100 nm triangular nanopores fabricated with the reactive ion etching variant of nanosphere lithography and angle-resolved nanosphere lithography

被引：129

作者：

Whitney, AV

Myers, BD

Van Duyne, RP

机构：

[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

[2] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

来源：

NANO LETTERS | 2004年 / 4卷 / 08期

关键词：

D O I：

10.1021/nl049345w

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Nanosphere lithography (NSL) is combined with reactive ion etching (RIE) to fabricate ordered arrays of in-plane, triangular cross-section nanopores. Nanopores with in-plane widths ranging from 44 to 404 nm and depths ranging from 25 to 250 nm are demonstrated. The combination of angle-resolved nanosphere lithography (AR NSL) and RIE yields an additional three-fold reduction in nanopore size.

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收藏

页码：1507 / 1511

页数：5

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