Development of large area silicon semiconductor detectors for use in the current mode

被引:19
作者
Ouyang, XP [1 ]
Li, ZF
Zhang, GG
Huo, YK
Zhang, QM
Zhang, XP
Song, XC
Jia, HY
Lei, JH
Sun, YC
机构
[1] Fudan Univ, Inst Modern Phys, Shanghai 200433, Peoples R China
[2] NW Inst Nucl Technol, Xian 710024, Peoples R China
[3] China Acad Engn Phys, Inst Elect Engn, Mianyang 621900, Peoples R China
关键词
semiconductor detector; large area; current mode;
D O I
10.7498/aps.51.1502
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Large area silicon semiconductor detectors for use in the current mode, with their dimensions of phi40, phi50 and phi60 mm, their depletion thickness of 200-300 mum, have been developed. Their performance measurements have been made, which indicate that the developed detectors can satisfactorily meet the needs in expectation. Compared with the detectors commercially available on the market, our large PIN detectors can serve both as reliable and efficient high-resolution devices for nuclear counting experiments, as well as monitors of high-intensity radiation fields in the current mode under a bias of 100-1000 V, while the detectors commercially available are only for the counting use.
引用
收藏
页码:1502 / 1505
页数:4
相关论文
共 3 条
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*FUD U TSINGH U PE, 1985, EXPT METH NUCL PHYS, V1
[2]  
HUANG B, 1981, EXPT RES, V1, P30
[3]  
Kuckuck R W., 1971, Semiconductor detectors for use in the current mode