Hydrostatic pressure, electric and magnetic field effects on shallow donor impurity states and photoionization cross section in cylindrical GaAs-Ga1-xAlxAs quantum dots

被引：50

作者：

Barseghyan, M. G. ^{[2
]}

Kirakosyan, A. A. ^{[2
]}

Duque, C. A. ^{[1
,3
]}

机构：

[1] Univ Antioquia, Inst Fis, Medellin 1226, Colombia

[2] Yerevan State Univ, Dept Solid State Phys, Yerevan 0025, Armenia

[3] Univ Estadual Campinas, Inst Fis, BR-13083970 Campinas, SP, Brazil

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2009年 / 246卷 / 03期

关键词：

WELL WIRES; ENERGY; DEPENDENCE;

D O I：

10.1002/pssb.200880516

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Using the variational method and the effective mass approximation, we have calculated the influence of applied electric and magnetic fields, both in the axial direction, and hydrostatic pressure on the binding energy and photoionization cross section for on center shallow-donor impurities in cylindrical shaped GaAs-Ga1-xAlxAs quantum dots. For the hydrostatic pressure effects the Gamma-X crossover has been taken into account. Different values for the structure dimensions, applied electric and magnetic fields, hydrostatic pressure, and energy of the incident photon have been considered. Because the parallel polarization of the incident radiation has been considered, the main effects on the photoionization cross section are associated with the applied electric field. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：626 / 629

页数：4

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