Effect of a Built-in Electric Field on the Photoluminescence Spectra of Elastically Strained InGaAs/GaAs Superlattices on GaAs (110) and (111)A Substrates

被引：0

作者：

Klimov, E. A. ^{[1
]}

Pushkarev, S. S. ^{[1
]}

Klochkov, A. N. ^{[2
]}

机构：

[1] Russian Acad Sci, Mokerov Inst Ultra High Frequency Semicond Elect, Moscow 117105, Russia

[2] Natl Res Nucl Univ MEPhI, Moscow 115409, Russia

来源：

NANOBIOTECHNOLOGY REPORTS | 2022年 / 17卷 / SUPPL 1期

基金：

俄罗斯科学基金会;

关键词：

molecular-beam epitaxy; GaAs; InGaAs; (110); (111)A; piezoelectric effect; photoluminescence spectroscopy; TERAHERTZ-RADIATION GENERATION; EPITAXIAL-FILMS; QUANTUM-WELLS;

D O I：

10.1134/S2635167622070126

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The manifestation of the piezoelectric effect in the photoluminescence spectra of superlattices with elastically strained {InxGa1 - xAs/GaAs} quantum wells grown by molecular-beam epitaxy on GaAs substrates with the crystallographic surface orientations (100), (110), and (111)A is reported.

引用

页码：S41 / S44

页数：4

共 9 条

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