Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration

被引：52

作者：

Li, Xiangdong ^{[1
,2
]}

Van Hove, Marleen ^{[1
]}

Zhao, Ming ^{[1
]}

Geens, Karen ^{[1
]}

Guo, Weiming ^{[1
]}

You, Shuzhen ^{[1
]}

Stoffels, Steve ^{[1
]}

Lempinen, Vesa-Pekka ^{[3
]}

Sormunen, Jaakko ^{[3
]}

Groeseneken, Guido ^{[1
,2
]}

Decoutere, Stefaan ^{[1
]}

机构：

[1] IMEC, B-3001 Leuven, Belgium

[2] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Leuven, Belgium

[3] Okmet Oy, Vantaa 01301, Finland

来源：

IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 07期

基金：

欧盟地平线“2020”;

关键词：

p-GaN; HEMT; backgating effect; GaN-on-SOI; half-bridge; monolithic integration;

D O I：

10.1109/LED.2018.2833883

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The backgating effect on trench-isolated enhancement-mode p-GaN devices fabricated on 200-mm GaN-on-SOI was investigated. We show that to minimize the backgating effect in the monolithically integrated half-bridge, the sources of both the low side and high side need to be connected to their respective fully isolated Si(111) device layers to keep the substrates and the sources at equipotential.

引用

页码：999 / 1002

页数：4

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