Single Lane Beyond 400 Gbit/s Optical Direct Detection Based on a Sidewall-doped Ge-Si Photodetector

被引：0
作者：
Hu, Xiao [1 ,2 ]
Wu, Dingyi [1 ]
Liu, Min [1 ]
Liu, Jia [1 ]
Zhang, Hongguang [1 ]
Zhang, Yuguang [1 ,2 ]
Chen, Daigao [1 ,2 ]
Wang, Lei [1 ,2 ]
Xiao, Xi [1 ,2 ,3 ]
Yu, Shaohua [1 ,2 ,3 ]
机构：
[1] China Informat & Commun Technol Grp Corp CICT, Natl Informat Optoelect Innovat Ctr, Wuhan 430074, Peoples R China
[2] China Informat & Commun Technol Grp Corp CICT, State Key Lab Opt Commun Technol & Networks, Wuhan 430074, Peoples R China
[3] Peng Cheng Lab, Shenzhen 518055, Peoples R China
来源：
2022 EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION (ECOC) | 2022年
基金：
中国国家自然科学基金;
关键词：
GERMANIUM PHOTODETECTOR; HIGH-SPEED;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We present a photodetector in which the sloped sidewalls of germanium are carefully doped. The 3-dB bandwidth > 55 GHz and responsivity of 1 A/W are demonstrated. Single lane direct detection of record-high speed 290 Gbit/s PAM-4 and 408 Gbit/s PAM-8 optical signals are achieved. (C) 2022 The Author(s)
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页数：4
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