A plasmonic infrared photodetector with narrow bandwidth absorption

被引：19

作者：

Chen, Hung-Hsin ^{[1
]}

Su, Yan-Chi ^{[1
]}

Huang, Wei-Lun ^{[2
]}

Kuo, Chun-Yen ^{[3
]}

Tian, Wei-Cheng ^{[1
,3
]}

Chen, Miin-Jang ^{[4
]}

Lee, Si-Chen ^{[1
,2
,3
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Elect Engn, Dept Elect Engn, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Dept Elect Engn, Taipei 10617, Taiwan

[3] Natl Taiwan Univ, Grad Inst Biomed Elect & Bioinformat, Taipei 10617, Taiwan

[4] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10617, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 02期

关键词：

ABSORBERS; ARRAYS;

D O I：

10.1063/1.4890514

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A plasmonic infrared photodetector with narrow bandwidth infrared absorption was investigated. The structure is constructed by a hydrogenated amorphous silicon (a-Si: H) film covered on a patterned Au layer consisting of the Au disk resonators and Au interdigitated electrodes on an Al2O3/Au substrate. This device exhibited narrow bandwidth infrared absorption corresponded to the localized surface plasmon resonance in the Au-disk/Al2O3/Au tri-layers resonators. The absorption of infrared energy heats up the top hydrogenated amorphous silicon film and reduces the film resistance which can be detected. The optical and electrical characteristics of the photodetector were studied. It was founded that the peak responsivities appeared at the wavelength which coincided with the localized surface plasmon resonance. (C) 2014 AIP Publishing LLC.

引用

页数：4

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