Synthesis and characterization of atomically thin graphite films on a silicon carbide substrate

被引：311

作者：

Rollings, E.

Gweon, G. -H.

Zhou, S. Y.

Mun, B. S.

McChesney, J. L.

Hussain, B. S.

Fedorov, An.

First, P. N.

de Heer, W. A.

Lanzara, A. ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[2] Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[3] Lawrence Berkeley Lab, Adv Light Source, Berkeley, CA 94720 USA

[4] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2006年 / 67卷 / 9-10期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/j.jpcs.2006.05.010

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

This paper reports the synthesis and detailed characterization of graphite thin films produced by thermal decomposition of the (0001) face of a 6H-SiC wafer, demonstrating the successful growth of single crystalline films down to approximately one graphene layer. The growth and characterization were carried out in ultrahigh vacuum (UHV) conditions. The growth process and sample quality were monitored by low-energy electron diffraction, and the thickness of the sample was determined by core level X-ray photoelectron spectroscopy. High-resolution angle-resolved photoemission spectroscopy shows constant energy map patterns, which are very sharp and fully momentum-resolved, but nonetheless not resolution limited. We discuss the implications of this observation in connection with scanning electron microscopy data, as well as with previous studies. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：2172 / 2177

页数：6

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[1] Logic circuits with carbon nanotube transistors [J].