The in situ observation of faceted dendrite growth during the directional solidification of GaSb

被引：6

作者：

Shiga, Keiji ^{[1
]}

Kawano, Masato ^{[1
]}

Maeda, Kensaku ^{[1
]}

Morito, Haruhiko ^{[1
]}

Fujiwara, Kozo ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan

来源：

SCRIPTA MATERIALIA | 2019年 / 168卷

基金：

日本学术振兴会;

关键词：

Compound semiconductors; Dendritic growth; Directional solidification; Twinning; CRYSTAL-GROWTH; GERMANIUM; MECHANISM; STABILITY; BEHAVIOR;

D O I：

10.1016/j.scriptamat.2019.04.022

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work, crystal-melt interfaces were directly observed during the directional solidification of molten GaSb having a stoichiometric composition, and the formation of dendrite structures was studied. With increases in growth velocity, the planar crystal-melt interface became unstable and dendrite growth was initiated. Dendrites having {111} facets were found to grow in either the < 110 > or < 112 > directions, and a pair of twin boundaries was identified at the center of a dendrite. The results show that the growth of dendrites in GaSb is associated with nucleation at twin-related reentrant corners. (C) 2019 Acta Materialia Inc Published by Elsevier Ltd. All rights reserved.

引用

页码：56 / 60

页数：5

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