Adaptive multi-band multi-mode power amplifier using integrated varactor-based tunable matching networks

被引：150

作者：

Neo, W. C. Edmund ^{[1
]}

Lin, Yu

Liu, Xiao-dong

de Vreede, Leo C. N.

Larson, Lawrence E.

Spirito, Marco

Pelk, Marco J.

Buisman, Koen

Akhnoukh, Atef

de Graauw, Anton

Nanver, Lis K.

机构：

[1] Delft Univ Technol, DIMES Inst, NL-2628 CT Delft, Netherlands

[2] Univ Calif San Diego, La Jolla, CA 92093 USA

[3] Philips Semicond, NL-6534 AE Nijmegen, Netherlands

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2006年 / 41卷 / 09期

关键词：

adaptive matching network; dynamic loadline; high efficiency; multi-band; multi-mode; power amplifier; RF adaptivity;

D O I：

10.1109/JSSC.2006.880586

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a multi-band multi-mode class-AB power amplifier, which utilizes continuously tunable input and output matching networks integrated in a low-loss silicon-on-glass technology. The tunable matching networks make use of very high Q varactor diodes (Q > 100 @ 2 GHz) in a low distortion anti-series configuration to achieve the desired source and load impedance tunability. A QUBIC4G (SiGe, f(t) = 50 GHz) high voltage breakdown transistor (V-CBO = 14V, V-CEO > 3.6 V) is used as active device. The realized adaptive amplifier provides 13 dB gain, 27-28 dBm output power at the 900, 1800, 1900 and 2100 MHz bands. For the communication bands above I GHz optimum load adaptation is facilitated resulting in efficiencies between 30%-55% over a 10 dB output power control range. The total chip area (including matching networks) of the amplifier is 8 mm(2).

引用

页码：2166 / 2176

页数：11

共 24 条

[1] High-performance varactor diodes integrated in a silicon-on-glass technology [J].

Buisman, K ;

Nanver, LK ;

Scholtes, TLM ;

Schellevis, H ;

de Vreede, LCN .

PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2005, :117-120

[2] Distortion-free varactor diode topologies for RF adaptivity [J].

Buisman, K ;

de Vreede, LCN ;

Larson, LE ;

Spirito, A ;

Akhnoukh, A ;

Scholtes, TLM ;

Nanver, LK .

2005 IEEE MTT-S International Microwave Symposium, Vols 1-4, 2005, :157-160

[3]

Buisman K, 2005, IEEE RAD FREQ INTEGR, P389

[4]

CRIPPS SC, 1999, RF POWER AMPLIFIER W

[5] QUBiC4G:: A fT/fmag=70/100GHz 0.25μm low power SiGe-BiCMOS production technology with high quality passives for 12.5Gb/s optical networking and emerging wireless applications up to 20GHz [J].

Deixler, P ;

Colclaser, R ;

Bower, D ;

Bell, N ;

De Boer, W ;

Szmyd, D ;

Bardy, S ;

Wilbanks, W ;

Barre, P ;

van Houdt, M ;

Paasschens, JCJ ;

Veenstra, H ;

vander Heijden, E ;

Donkers, JJTM ;

Slotboom, JW .

PROCEEDINGS OF THE 2002 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2002, :201-204

[6] A high average-efficiency SiGe HBT power amplifier for WCDMA handset applications [J].

Deng, JX ;

Gudem, PS ;

Larson, LE ;

Asbeck, PM .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2005, 53 (02) :529-537

[7] Adaptive biasing for UMTS power amplifiers [J].

Grillo, G ;

Cristaudo, D .

PROCEEDING OF THE 2004 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2004, :188-191

[8]

Jeong HT, 2005, IEEE MTT S INT MICR, P2059

[9]

KHANIFAR A, 2004, P IEEE MTTS INT MICR, P2047

[10] Variable-load constant-efficiency power amplifier for mobile communications applications [J].

Leuzzi, G ;

Micheli, C .

33RD EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS, 2003, :375-377

← 1 2 3 →