Ultra-wideband source using gallium arsenide photoconductive semiconductor switches

被引：84
作者：
Schoenberg, JSH
Burger, JW
Tyo, JS
Abdalla, MD
Skipper, MC
Buchwald, WR
机构：
[1] MAXWELL TECHNOL,FED DIV,ALBUQUERQUE,NM 87119
[2] USA,RES LAB,ED,EP,AMSRL,FT MONMOUTH,NJ 07703
来源：
IEEE TRANSACTIONS ON PLASMA SCIENCE | 1997年 / 25卷 / 02期
关键词：
D O I：
10.1109/27.602507
中图分类号：
O35 [流体力学]; O53 [等离子体物理学];
学科分类号：
070204 ; 080103 ; 080704 ;
摘要：
An ultrawide-band (UWB) pulse generator based on high gain (lock-on mode) gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS's) is presented, Revised PCSS contact design shows improved performance in hold-off field, on-state switch potential, and switching jitter, while reducing the switch volume by 75% compared to previous designs. A compact laser diode module operates at 904 nm and triggers the PCSS at pulse repetition rates (PRR) of up to 2 kHz. The 625 W laser diode output power is found to be sufficient to produce switching jitter of 65 ps rms at a switched field of 80 kV/cm, The PCSS switching jitter is found to have a strong dependence upon the switched field when triggered with the laser diode module, The revised PCSS geometry is easily integrated into a compact, parallel-plate source used to drive a TEM horn impulse-radiating antenna (IRA), The radiated field has a rise time of 330 ps and an adjustable low-frequency spectrum.
引用
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页码：327 / 334
页数：8
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