A SIMPLE METHOD TO CALCULATE THE DISPLACEMENT DAMAGE CROSS SECTION OF SILICON CARBIDE

被引：20

作者：

Chang, Jonghwa ^{[1
]}

Cho, Jin-Young ^{[1
]}

Gil, Choong-Sup ^{[1
]}

Lee, Won-Jae ^{[1
]}

机构：

[1] Korea Atom Energy Res Inst, Taejon, South Korea

来源：

NUCLEAR ENGINEERING AND TECHNOLOGY | 2014年 / 46卷 / 04期

关键词：

Displacement Per Atom (DPA); Cross Section; Silicon Carbide; Compound Material; DEFECT PRODUCTION;

D O I：

10.5516/NET.01.2013.051

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

We developed a simple method to prepare the displacement damage cross section of SiC using NJOY and SRIM/TRIM. The number of displacements per atom (DPA) dependent on primary knock-on atom (PKA) energy was computed using SRIM/TRIM and it is directly used by NJOY/HEATR to compute the neutron energy dependent DPA cross sections which are required to estimate the accumulated DPA of nuclear material. SiC DPA cross section is published as a table in DeCART 47 energy group structure. Proposed methodology can be easily extended to other materials.

引用

页码：475 / 480

页数：6

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