Molecular beam epitaxy-grown AlGaInAs/InP distributed Bragg reflectors for 1.55 μm VCSELs

被引：13
|
作者：
Reddy, MHM [1 ]
Asano, T [1 ]
Koda, R [1 ]
Buell, DA [1 ]
Coldren, LA [1 ]
机构：
[1] Univ Calif Santa Barbara, Elect & Comp Engn Dept, Santa Barbara, CA 93106 USA
来源：
ELECTRONICS LETTERS | 2002年 / 38卷 / 20期
关键词：
D O I：
10.1049/el:20020796
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Solid source molecular beam epitaxy with valved P cracker source is used for the first time to grow an AlGaInAs/InP distributed Bragg reflector (DBR). The DBR shows a measured reflectivity of 98.78% for 25 pairs with a stop band of more than 100 nm. Current-voltage study shows a low drop of 4 mV/pair.
引用
收藏
页码：1181 / 1182
页数：2
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