Electric properties of BiFeO3 films deposited on LaNiO3 by sol-gel process

被引：43

作者：

Liu, Zuli ^{[1
]}

Liu, Hongri ^{[1
]}

Du, Guihuan ^{[1
]}

Zhang, Jian ^{[1
]}

Yao, Kailun ^{[1
]}

机构：

[1] Huazhong Univ Sci & Technol, Dept Phys, Wuhan 430074, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 100卷 / 04期

关键词：

D O I：

10.1063/1.2335399

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sol-gel process was adopted to prepare BiFeO3 films. Pure phase BiFeO3 films were deposited on LaNiO3 coated Si (111) substrates at various annealing temperatures of 450-600 degrees C. The films annealed at 450-600 degrees C are (110) and (1_10) biaxis preferential oriented. Below 550 degrees C, the remnant polarization increases with the annealed temperature. The film annealed at 550 degrees C has the largest double remnant polarization of 12.8 mu C/cm(2). For the film annealed at 600 degrees C, small double remnant polarization of 2P(r)=4.6 mu C/cm(2) was observed for its low breakdown electric field. Besides, the electric property is enhanced with the annealing temperature below 550 degrees C and it is deteriorated for the film annealed at 600 degrees C. Large dielectric constant and low leakage conduction were obtained by the improvement of preparation technology. (c) 2006 American Institute of Physics.

引用

页数：4

共 24 条

[1] Structural, dielectric, and ferroelectric properties of PbTiO3 thin films by a simple sol-gel technique [J].

Bao, DH ;

Yao, X ;

Wakiya, N ;

Shinozaki, K ;

Mizutani, N .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 94 (2-3) :269-274

[2]

CHANG HSW, 1997, J SOLID STATE CHEM C, V87, P128

[3] Structural, dielectric and pyroelectric studies of Pb1-xCaxTiO3 thin films [J].

Chopra, S ;

Sharma, S ;

Goel, TC ;

Mendiratta, RG .

SOLID STATE COMMUNICATIONS, 2003, 127 (04) :299-304

[4] Enhanced ferroelectric properties in laser-ablated SrBi2Nb2O9 thin films on platinized silicon substrate [J].

Das, RR ;

Bhattacharya, P ;

Katiyar, RS .

APPLIED PHYSICS LETTERS, 2002, 81 (09) :1672-1674

[5] Evidence for the likely occurrence of magnetoferroelectricity in the simple perovskite, BiMnO3 [J].

dos Santos, AM ;

Parashar, S ;

Raju, AR ;

Zhao, YS ;

Cheetham, AK ;

Rao, CNR .

SOLID STATE COMMUNICATIONS, 2002, 122 (1-2) :49-52

[6] MAGNETIC-PROPERTIES OF BIFEO3-BATIO3 AND BIFEO3-PBTI(ZR)O3 GLASSY SPUTTERED FILMS [J].

FUJII, T ;

JINZENJI, S ;

ASAHARA, Y ;

KAJIMA, A ;

SHINJO, T .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (10) :5434-5436

[7]

Hur N., 2002, NATURE, V419, P818

[8] Multiferroic BiFeO3 thin films processed via chemical solution deposition:: Structural and electrical characterization -: art. no. 094901 [J].

Iakovlev, S ;

Solterbeck, CH ;

Kuhnke, M ;

Es-Souni, M .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (09)

[9] Improvement of leakage currents of Pt/(Ba, Sr)TiO3/Pt capacitors [J].

Joo, JH ;

Seon, MJ ;

Jeon, YC ;

Oh, KY ;

Roh, JS ;

Kim, JJ .

APPLIED PHYSICS LETTERS, 1997, 70 (22) :3053-3055

[10] FILM STRUCTURE AND MAGNETIC-PROPERTIES OF FERROMAGNETIC AMORPHOUS BI2O3-FE2O3-PBTIO3 FILMS PREPARED BY RF-REACTIVE SPUTTERING [J].

KAJIMA, A ;

KANEDA, T ;

ITO, H ;

FUJII, T ;

OKAMOTO, I .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (07) :3760-3764

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