Silicon nitride films deposited by low pressure chemical vapor deposition from SiH4-NH3-N2 system

被引：0

作者：

Liu, XJ ^{[1
]}

Huang, ZY ^{[1
]}

Huang, LP ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China

来源：

EURO CERAMICS VIII, PTS 1-3 | 2004年 / 264-268卷

关键词：

silicon nitride films; LPCVD; growth kinetics; film compositions;

D O I：

10.4028/www.scientific.net/KEM.264-268.643

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Silicon nitride films are prepared by low pressure chemical vapor deposition (LPCVD) from SiH4-NH3-N-2 system. The growth kinetics are investigated as a function of total pressure, NH3/SiH4 flow ratios, and deposition temperature. The film compositions and morphology are characterized by XPS, FTIR, and ERD respectively. For optimized processing conditions, stoichiometric silicon nitride film with low hydrogen content can be obtained.

引用

页码：643 / 646

页数：4

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