Comprehensive Evaluation and Study of Pattern Dependency Behavior in Selective Epitaxial Growth of B-Doped SiGe Layers

被引：19
作者：
Kolahdouz, Mohammadreza [1 ]
Hallstedt, Julius [1 ]
Khatibi, Ali [1 ]
Ostling, Mikael [1 ]
Wise, Rick [2 ]
Riley, Deborah J. [2 ]
Radamson, Henry [1 ]
机构：
[1] Royal Inst Technol, Sch Informat & Commun Technol, S-16640 Stockholm, Sweden
[2] Texas Instruments Inc, Dallas, TX 75243 USA
来源：
IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2009年 / 8卷 / 03期
关键词：
Loading effect; pattern dependency; selective epitaxy; SiGe; CHEMICAL-VAPOR-DEPOSITION; PARAMETERS;
D O I：
10.1109/TNANO.2008.2009219
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence of chip layout and architecture on the pattern dependency of selective epitaxy of B-doped SiGe layers has been studied. The variations of Ge-, B-content, and growth rate have been investigated locally within a wafer and globally from wafer to wafer. The results are described by the gas depletion theory. Methods to control the variation of layer profile are suggested.
引用
收藏
页码：291 / 297
页数：7
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