Lifetime Investigations of 4H-SiC PiN Power Diodes

被引：13
|
作者：
Reshanov, S. A. [1 ]
Bartsch, W. [2 ]
Zippelius, B. [1 ]
Pensl, G. [1 ]
机构：
[1] Univ Erlangen Nurnberg, Lehrstuhl Angew Phys, D-91058 Erlangen, Germany
[2] SiCED Elect Dev GmbH & Co KG, D-91058 Erlangen, Germany
来源：
SILICON CARBIDE AND RELATED MATERIALS 2008 | 2009年 / 615-617卷
关键词：
lifetime; DLTS; CRT; OCVD; CARRIER LIFETIME; TRANSIENT;
D O I：
10.4028/www.scientific.net/MSF.615-617.699
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Lifetime measurements are performed on 4H-SiC pin power diodes (6.5 kV). The lifetime values in the base range from 1.1 mu s to 2.1 mu s; these Values demonstrate the high quality of the 4H-SiC epilayer and the optimized device processing. The observed lifetimes are correlated with deep defect centers detected by deep level transient spectroscopy. The role of the Z(1/2)-center as a lifetime killer is discussed.
引用
收藏
页码：699 / 702
页数：4
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