Enhanced performance of InGaN light-emitting diodes with InGaN/GaN supperlattice and graded-composition InGaN/GaN supperlattice interlayers

被引：10

作者：

Yang, Yujue ^{[1
]}

Zeng, Yiping ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2014年 / 211卷 / 07期

关键词：

efficiency droop; hole injection; InGaN quantum wells; light-emitting diodes; EFFICIENCY-DROOP; LAYER;

D O I：

10.1002/pssa.201431088

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The advantages of InGaN-based light-emitting diodes (LEDs) with InGaN/GaN supperlattice (SL) and graded-composition InGaN/GaN SL interlayers in the last-barrier/EBL space are studied numerically. The electrostatic field, energy band diagrams, carrier concentrations, radiative recombination rate, light-current-voltage (L-I-V) performances, and internal quantum efficiency (IQE) are investigated. Simulation results show that the light-output power and IQE are both enhanced compared to the conventional LED due to the appropriately modified energy band diagrams, which are favorable for the improvement in hole injection efficiency and electron blocking capability, especially for the LED with graded-composition InGaN/GaN SL interlayer. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1640 / 1644

页数：5

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