Gas sensor applications of zinc oxide thin film grown by the polymeric precursor method

被引:34
作者
Biasotto, G. [1 ]
Ranieri, M. G. A. [2 ]
Foschini, C. R. [2 ]
Simoes, A. Z. [3 ]
Longo, E. [1 ]
Zaghete, M. A. [1 ]
机构
[1] UNESP, Inst Quim, Dept Quim Fis, Lab Interdisciplinar Ceram LIEC, BR-14800900 Araraquara, SP, Brazil
[2] Univ Estadual Paulista, UNESP, Fac Engn Bauru, Dept Engn Mecan, BR-17033360 Bauru, SP, Brazil
[3] Univ Estadual Paulista, UNESP, Fac Engn Guaratingueta, BR-12516410 Guaratingueta, SP, Brazil
基金
巴西圣保罗研究基金会;
关键词
Diffusion; Sensors; Ceramics; Chemical synthesis; Crystal growth; SENSING PROPERTIES; ZNO; CO; SENSITIVITY; SELECTIVITY; PBTIO3;
D O I
10.1016/j.ceramint.2014.06.099
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Good quality zinc oxide ZnO films were deposited on alumina substrates by the polymeric precursor method (PPM) using zinc acetate as the precursor. X-ray diffraction (XRD) was used to confirm the crystallinity of the zinc oxide films which were free of impurities and SEM study revealed the uniform deposition of fine grains with a thickness of 120 nm. ZnO films were used for CO gas detection at different times by recording the change in the film conductance. The faster response of ZnO sensors to CO gas is believed to be due to high porous sensing films which show higher surface-to-volume ratio. The O-2 ', O '', O ' species concentration emerging from the [ZnO5 center dot VO circle] +1/2O(2) -> [ZnO6] chemisorptions reaction affects the ZnO gas sensor response owing to the fact that the oxygen ion acts as a trap for electrons from the bulk of films. (c) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:14991 / 14996
页数:6
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