Study on the effect of heat treatment conditions on metalorganic-chemical-vapor-deposited ferroelectric Hf0.5Zr0.5O2 thin film on Ir electrode

被引：68

作者：

Shimizu, Takao ^{[1
]}

Yokouchi, Tatsuhiko ^{[2
]}

Shiraishi, Takahisa ^{[2
]}

Oikawa, Takahiro ^{[2
]}

Krishnan, P. S. Sankara Rama ^{[2
]}

Funakubo, Hioshi ^{[1
,2
]}

机构：

[1] Tokyo Inst Technol, Mat Res Ctr Element Strategy, Yokohama, Kanagawa 2268503, Japan

[2] Tokyo Inst Technol, Dept Innovat & Engn Mat, Yokohama, Kanagawa 2268502, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 09期

基金：

奥地利科学基金会;

关键词：

PHASE-EQUILIBRIA; MEMORY DEVICES; SYSTEM; HAFNIA;

D O I：

10.7567/JJAP.53.09PA04

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of the heat treatment conditions on the constituent phases and electrical properties of (Hf(0.5)Z(0.5))O-2 films deposited by the metalorganic chemical vapor deposition was investigated. By using a low temperature or short duration for post-heat treatment after the deposition, the volume fraction of the tetragonal phase increases, resulting in a high dielectric constant. On the other hand, the volume fraction of the monoclinic phase increased in the films that were heat-treated at higher temperatures and exposed to longer heat treatment duration. The ferroelectric with and dielectric properties of these films were greatly inferior. Superior ferroelectric properties a significant volume fraction of orthorhombic phase were achieved for intermediate heat treatment conditions. These results give useful information to understand the origin of the ferroelectricity and to control the phases and electrical properties in HfO2-based films. (C) 2014 The Japan Society of Applied Physics

引用

页数：6

共 31 条

[1] Phase transitions in ferroelectric silicon doped hafnium oxide
Boescke, T. S.
Teichert, St.
Braeuhaus, D.
Mueller, J.
Schroeder, U.
Boettger, U.
Mikolajick, T.
[J]. APPLIED PHYSICS LETTERS, 2011, 99 (11)
[2] Ferroelectricity in hafnium oxide thin films
Boescke, T. S.
Mueller, J.
Braeuhaus, D.
Schroeder, U.
Boettger, U.
[J]. APPLIED PHYSICS LETTERS, 2011, 99 (10)
[3] Development of hafnium based high-k materials-A review
Choi, J. H.
Mao, Y.
Chang, J. P.
[J]. MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2011, 72 (06) : 97 - 136
[4] Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices
Govindarajan, S.
Boescke, T. S.
Sivasubramani, P.
Kirsch, P. D.
Lee, B. H.
Tseng, H.-H.
Jammy, R.
Schroeder, U.
Ramanathan, S.
Gnade, B. E.
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (06)
[5] Heat treatment of nanocrystalline TiN films deposited by unbalanced magnetron sputtering
Huang, JH
Yu, KJ
Sit, P
Yu, GP
[J]. SURFACE & COATINGS TECHNOLOGY, 2006, 200 (14-15) : 4291 - 4299
[6] Kisi E. H., 1998, Key Engineering Materials, V153-154, P1
[7] Kisi EH, 1998, J AM CERAM SOC, V81, P741, DOI 10.1111/j.1151-2916.1998.tb02402.x
[8] Permittivity increase of yttrium-doped HfO2 through structural phase transformation -: art. no. 102906
Kita, K
Kyuno, K
Toriumi, A
[J]. APPLIED PHYSICS LETTERS, 2005, 86 (10) : 1 - 3
[9] High-k dielectrics for future generation memory devices (Invited Paper)
Kittl, J. A.
Opsomer, K.
Popovici, M.
Menou, N.
Kaczer, B.
Wang, X. P.
Adelmann, C.
Pawlak, M. A.
Tomida, K.
Rothschild, A.
Govoreanu, B.
Degraeve, R.
Schaekers, M.
Zahid, M.
Delabie, A.
Meersschaut, J.
Polspoel, W.
Clima, S.
Pourtois, G.
Knaepen, W.
Detavernier, C.
Afanas'ev, V. V.
Blomberg, T.
Pierreux, D.
Swerts, J.
Fischer, P.
Maes, J. W.
Manger, D.
Vandervorst, W.
Conard, T.
Franquet, A.
Favia, P.
Bender, H.
Brijs, B.
Van Elshocht, S.
Jurczak, M.
Van Houdt, J.
Wouters, D. J.
[J]. MICROELECTRONIC ENGINEERING, 2009, 86 (7-9) : 1789 - 1795
[10] Current status and challenges of ferroelectric memory devices
Kohlstedt, H
Mustafa, Y
Gerber, A
Petraru, A
Fitsilis, M
Meyer, R
Böttger, U
Waser, R
[J]. MICROELECTRONIC ENGINEERING, 2005, 80 : 296 - 304

← 1 2 3 4 →