Improvement of Power Cycling Reliability of 3.3kV Full-SiC Power Modules with Sintered Copper Technology for Tj,max=175°C

被引：0

作者：

Yasui, Kan ^{[1
]}

Hayakawa, Seiichi ^{[1
]}

Nakamura, Masato ^{[1
]}

Kawase, Daisuke ^{[1
]}

Ishigaki, Takashi ^{[1
]}

Sasaki, Koji ^{[1
]}

Tabata, Toshihito ^{[1
]}

Morita, Toshiaki ^{[1
]}

Sagawa, Masakazu ^{[2
]}

Matsushima, Hiroyuki ^{[2
]}

Kobayashi, Toshiyuki ^{[2
]}

机构：

[1] Hitachi Power Semicond Device Ltd, Hitachi, Ibaraki, Japan

[2] Hitachi Ltd, Res & Dev Grp, Hitachi, Ibaraki, Japan

来源：

PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2018年

关键词：

SiC MOS; silicon carbide power module; power cycling; sintered copper; reliability;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Higher maximum junction temperature operation requires higher power cycling reliability especially for silicon carbide power modules. In this work, with the help of a novel sintered copper die attach technology, 3.3kV/450A full-SiC power modules for up to 175 degrees C maximum junction temperature were developed. Demonstrated power cycling lifetime shows an improvement of six times conventional Pb-rich solder die attach modules.

引用

页码：455 / 458

页数：4

共 3 条

[1] Reliability Improvement of 3.3 kV Full-SiC Power Modules for Power Cycling Tests With Sintered Copper Die Attach Technology
Yasui, Kan
Hayakawa, Seiichi
Funaki, Tsuyoshi
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2023, 13 (09): : 1476 - 1485
[2] Performance Improvement for 3.3 kV 1000 A High-Power Density Full-SiC Power Modules With Sintered Copper Die Attach
Yasui, Kan
Morikawa, Takahiro
Hayakawa, Seiichi
Funaki, Tsuyoshi
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2024, 12 (05) : 4550 - 4561
[3] Power Cycling Test on 3.3kV SiC MOSFETs and the Effects of Bipolar Degradation on the Temperature Estimation by VSD-Method
Hoffmann, Felix
Soler, Victor
Mihaila, Andrei
Kaminski, Nando
2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2019, : 147 - 150

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