Improved performance of CdS and dye co-sensitized solar cell using a TiO2 sol-gel solution

被引:6
作者
Son, Min-Kyu [1 ]
Seo, Hyunwoong [2 ]
Kim, Soo-Kyoung [1 ]
Park, Songyi [1 ]
Jeong, Myeong-Soo [1 ]
Kim, Hee-Je [1 ]
机构
[1] Pusan Natl Univ, Dept Elect & Comp Engn, Pusan 609735, South Korea
[2] Kyushu Univ, Sch Informat Sci & Elect Engn, Nishi Ku, Fukuoka 8190395, Japan
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2014年 / 211卷 / 08期
关键词
CdS; dye co-sensitization; quantum dot-sensitized solar cell; TiO2 sol-gel processing; ATOMIC LAYER DEPOSITION; QUANTUM DOTS; EFFICIENCY; CIRCUIT; SEMICONDUCTOR; ELECTROLYTE;
D O I
10.1002/pssa.201330492
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An interfacial layer (IL) between the CdS quantum dot (QD) and dye is necessary in the CdS-dye co-sensitized solar cell (CSC) to prevent the corrosion of CdS and the damage of electrolyte. In this study, the simple method of using a TiO2 sol-gel solution is suggested to fabricate the IL. An air exposure process after dipping into the TiO2 sol-gel solution facilitates formation of the anatase TiO2 thin film. To confirm the effect of TiO2 IL, the performance of CdS-dye CSC is analyzed and compared to the conventional CdS QD sensitized solar cell (QDSC). The formed TiO2 IL effectively prevents the corrosion of CdS and the damage of electrolyte. In addition, this suppresses the electron recombination from the CdS to the electrolyte, resulting in the enhanced electron transport at the TiO2/CdS QD-dye/electrolyte interface. As a result, the overall photovoltaic performance is much increased from 1.33% to 2.77%, compared to the conventional CdS QDSC. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:1726 / 1731
页数:6
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