Boron induced c-axis growth and ammonia sensing signatures of spray pyrolysis deposited ZnO thin films - Relation between crystallinity and sensing

被引:10
作者
Shankar, Prabakaran [1 ]
Srinivasan, Parthasarathy [2 ,5 ]
Vutukuri, Brahmaiah [2 ,5 ]
Kulandaisamy, Arockia Jayalatha [5 ]
Mani, Ganesh Kumar [3 ]
Babu, K. Jayanth [2 ,5 ]
Lee, Jung Heon [1 ,4 ]
Rayappan, John Bosco Balaguru [2 ,5 ]
机构
[1] Sungkyunkwan Univ SKKU, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea
[2] SASTRA Deemed Univ, Ctr Nanotechnol & Adv Biomat CeNTAB, Thanjavur 613401, Tamil Nadu, India
[3] Tokai Univ, Micro Nano Technol Ctr, Hiratsuka, Kanagawa 2591292, Japan
[4] Sungkyunkwan Univ SKKU, SKKU Adv Inst Nanotechnol SAINT, Biomed Inst Convergence SKKU BICS, Inst Quantum Biophys IQB,Res Ctr Adv Mat Tech, Suwon 16419, South Korea
[5] SASTRA Deemed Univ, Sch Elect Elect Engn SEEE, Thanjavur 613401, Tamil Nadu, India
基金
新加坡国家研究基金会;
关键词
Ammonia sensor; Boron doped ZnO; Spray pyrolysis; Tensile stress; Band gap; ZINC-OXIDE FILMS; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; NANOSTRUCTURES; SUBSTRATE; SENSOR;
D O I
10.1016/j.tsf.2022.139126
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Boron (B) doping in zinc oxide (ZnO) using spray pyrolysis has always led to deterioration of host crystal structure. Unlikely, here, we report the optimized spray pyrolysis deposition parameters for the development of c-axis oriented boron-doped ZnO thin films. As the B concentration increases from 2 to 10 mol%, the hexagonal crystal structure exhibited a highly oriented (002) plane with an increased texture co-efficient. In particular, 2 mol% B dopants promoted the growth of the (101) and (100) planes and increased the crystallite size. Tensile stress in the c-axis plane of 10 mol% B-doped ZnO films leads to the red shift in the band gap (from wide to narrow). Furthermore, 10 mol% B dopants resulted in the enhanced ammonia sensing performance at room temperature. The sensing performance of all the deposited B-doped ZnO films revealed that influence of enhanced planes of host structure energetically favoured the ammonia adsorption.
引用
收藏
页数:7
相关论文
共 39 条
  • [1] Preparation of ZnO nanostructures by RF-magnetron sputtering on thermally oxidized porous silicon substrate for VOC sensing application
    Al-Salman, Husam S.
    Abdullah, M. J.
    [J]. MEASUREMENT, 2015, 59 : 248 - 257
  • [2] Ali HJ., 2018, MALAYSIAN J SCI, V29, P150, DOI [10.23851/mjs.v29i1.55, DOI 10.23851/MJS.V29I1.55]
  • [3] Bosco J., 2015, SCI LETT J, V4, P126, DOI DOI 10.1016/J.PETLM.2016.10.002
  • [4] Roughness-based monitoring of transparency and conductivity in boron-doped ZnO thin films prepared by spray pyrolysis
    Gaikwad, Rajendra S.
    Bhande, Sambhaji S.
    Mane, Rajaram S.
    Pawar, Bhagwat N.
    Gaikwad, Sanjay L.
    Han, Sung-Hwan
    Joo, Oh-Shim
    [J]. MATERIALS RESEARCH BULLETIN, 2012, 47 (12) : 4257 - 4262
  • [5] Dual role of boron in improving electrical performance and device stability of low temperature solution processed ZnO thin film transistors
    Gandla, Srinivas
    Gollu, Sankara Rao
    Sharma, Ramakant
    Sarangi, Venkateshwarlu
    Gupta, Dipti
    [J]. APPLIED PHYSICS LETTERS, 2015, 107 (15)
  • [6] Boron doped ZnO thin films fabricated by RF-magnetron sputtering
    Gao, Li
    Zhang, Yan
    Zhang, Jian-Min
    Xu, Ke-Wei
    [J]. APPLIED SURFACE SCIENCE, 2011, 257 (07) : 2498 - 2502
  • [7] Hydrogen-related excitons and their excited-state transitions in ZnO
    Heinhold, R.
    Neiman, A.
    Kennedy, J. V.
    Markwitz, A.
    Reeves, R. J.
    Allen, M. W.
    [J]. PHYSICAL REVIEW B, 2017, 95 (05)
  • [8] Effect of the pH on the growth and properties of sol-gel derived boron-doped ZnO transparent conducting thin film
    Houng, Boen
    Huang, Cheng-Lou
    Tsai, Song-Yuan
    [J]. JOURNAL OF CRYSTAL GROWTH, 2007, 307 (02) : 328 - 333
  • [9] Effect of boron doping concentration on structural optical electrical properties of nanostructured ZnO films
    Hurma, T.
    [J]. JOURNAL OF MOLECULAR STRUCTURE, 2019, 1189 : 1 - 7
  • [10] Jabbar R.H., 2020, J ADV PHARM ED RES, V9, P24