High Efficiency Ka-Band Gallium Nitride Power Amplifier MMICs

被引：50

作者：

Campbell, Charles F. ^{[1
]}

Liu, Yueying ^{[1
]}

Kao, Ming-Yih ^{[1
]}

Nayak, Sabyasachi ^{[1
]}

机构：

[1] TriQuint, Infrastruct & Def Prod, 500 West Renner Rd, Richardson, TX USA

来源：

2013 IEEE INTERNATIONAL CONFERENCE ON MICROWAVES, COMMUNICATIONS, ANTENNAS AND ELECTRONICS SYSTEMS (IEEE COMCAS 2013) | 2013年

关键词：

MMIC; Gallium Nitride; millimeter wave; power amplifiers;

D O I：

10.1109/COMCAS.2013.6685246

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design and performance of two high efficiency Ka-band power amplifier MMICs utilizing a 0.15 mu m GaN HEMT process technology is presented. Measured in-fixture continuous wave (CW) results for the 3-stage balanced amplifier demonstrates up to 11W of output power and 30% power added efficiency (PAE) at 30GHz. The 3-stage single-ended design produced over 6W of output power and up to 34% PAE. The die size for the balanced and single-ended MMICs are 3.24x3.60mm(2) and 1.74x3.24mm(2) respectively.

引用

页数：5