Fabrication and Characterization of SnCl2- and CuBr-Added Perovskite Photovoltaic Devices

被引:5
|
作者
Asakawa, Yugo [1 ]
Oku, Takeo [1 ]
Kido, Masashi [1 ]
Suzuki, Atsushi [1 ]
Okumura, Riku [1 ]
Okita, Masanobu [2 ]
Fukunishi, Sakiko [2 ]
Tachikawa, Tomoharu [2 ]
Hasegawa, Tomoya [2 ]
机构
[1] Univ Shiga Prefecture, Dept Mat Sci, 2500 Hassaka, Hikone, Shiga 5228533, Japan
[2] Osaka Gas Chem Co Ltd, Konohana Ku, 5-11-61 Torishima, Osaka, Osaka 5540051, Japan
基金
日本学术振兴会;
关键词
perovskite; solar cell; copper; tin; first-principles calculation; polysilane; SOLAR-CELLS; LEAD-HALIDE; HIGHLY EFFICIENT; FORMAMIDINIUM; CH3NH3PBI3; PERFORMANCE;
D O I
10.3390/technologies10060112
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Perovskite photovoltaic devices added with tin (Sn) dichloride and copper (Cu) bromide were fabricated and characterized. The thin film devices were prepared by an ordinary spin-coating technique using an air blowing method in ambient air. A decaphenylcyclopentasilane layer was coated at the surface of perovskite layer and annealed at a high temperature of 190 degrees C. Conversion efficiencies and short-circuit current densities were improved for devices added with Sn and Cu compared with the standard devices. The energy gap of the perovskite crystal decreased through the Sn addition, which was also confirmed by first-principles calculations.
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页数:12
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