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Axisymmetric All-Carbon Devices with High-Spin Filter Efficiency, Large-Spin Rectifying, and Strong-Spin Negative Differential Resistance Properties
被引:20
作者:
Hong, X. K.
[1
]
Kuang, Y. W.
[1
]
Qian, C.
[1
]
Tao, Y. M.
[1
]
Yu, H. L.
[1
]
Zhang, D. B.
[1
]
Liu, Y. S.
[1
]
Feng, J. F.
[1
]
Yang, X. F.
[1
]
Wang, X. F.
[2
]
机构:
[1] Changshu Inst Technol, Coll Phys & Engn, Changshu 215500, Jiangsu, Peoples R China
[2] Soochow Univ, Coll Phys Optoelect & Energy, Suzhou 215006, Jiangsu, Peoples R China
基金:
中国国家自然科学基金;
关键词:
GRAPHENE NANORIBBONS;
MAGNETORESISTANCE;
CONDUCTANCE;
TRANSPORT;
CHAIN;
D O I:
10.1021/acs.jpcc.5b09180
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
We propose the perfect all-carbon axisymmetric spintronic devices consisting of a zigzag-edged trigonal graphene (ZTG) linked to left and right zigzag-edged graphene nanoribbons (ZGNR) electrodes via carbon atomic chains (CACs). To ensure the stability of the system, the edge carbon atoms are passivated by hydrogen atoms. The self-consistent density functional theory (DFT) calculations show that the simple all-carbon system possesses the prefect spin-filtering property at a wide voltage region from -1.0 to 1.0 V. More importantly, the proposed system can act as a perfect dual spin diode in the antiparallel (AP) spin configuration, and the single-spin rectifying ratio can reach 103. When we add the number of the CACs linked to the left ZGNR electrode, the device shows the obvious single-spin negative differential resistance (NDR) behavior, which originates from the appearance of the localized states in the region of the left ZGNR electrode and ZTG. Meanwhile, the perfect spin-filtering and dual spin-diode properties are also retained in the all-carbon spintronic device, and the single-spin rectifying ratio can be enhanced to about 10(4).
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页码:668 / 676
页数:9
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