Growth and characterization of Cd1-xZnxTe crystals with high Zn concentrations

被引：11
|
作者：
Bueno, JJP
Rodríguez, ME
Zelaya-Angel, O
Baquero, R
Gonzalez-Hernández, J
Baños, L
Fitzpatrick, BJ
机构：
[1] IPN, Ctr Invest & Estudios Avanzados, Dept Fis, Mexico City 07360, DF, Mexico
[2] IPN, Ctr Invest Ciencia Aplicada & Tecnol Avanzada, Queretaro 76040, Qro, Mexico
[3] IPN, Lab Invest Mat, CINVESTAV, Queretaro 76001, Mexico
[4] Univ Nacl Autonoma Mexico, Inst Invest Mat, Mexico City, DF, Mexico
[5] Opt Semicond Inc, Peekskill, NY 10566 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2000年 / 209卷 / 04期
关键词：
semiconductors; crystal growth; point defects; optical properties; luminescence;
D O I：
10.1016/S0022-0248(99)00514-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The crystalline quality of large grain size Cd1-xZnxTe with high Zn concentrations(0.45 < x < 0.85) grown by a zone melting process was investigated using photoluminescence, X-ray diffraction, optical transmission and micro-Raman measurements. We have found that extrinsic and intrinsic factors lead to Zn segregation encountered in both the radial and the longitudinal directions. The degree of segregation depends on the nominal Zn concentration. In addition, small precipitates of tellurium are found in the regions with low Zn concentrations in the solid solution. Such precipitates are absent in regions with high Zn concentrations. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：701 / 708
页数：8
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