Fabrication of high power, high-efficiency linear array diode lasers by pulse anodic oxidation

被引：0

作者：

Xin, Gao ^{[1
]}

Jing, Zhang ^{[1
]}

Hui, Li ^{[1
]}

Yi, Qu ^{[1
]}

Bo Baoxue ^{[1
]}

机构：

[1] Changchun Univ Sci & Technol, Changchun, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 9A期

关键词：

lasers; anodic oxidation; strained quantum well; linear array diode laser;

D O I：

10.1143/JJAP.45.6845

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaAlAs/AlGaAs/GaAs double-quantum-well (DQW) linear array diode lasers with asymmetric wide waveguide have been successfully fabricated by pulse anodic oxidation upon molecular beam epitaxy material growth. High-efficiency and high-power quasi-continuous-wave (QCW) output has been realized at 808 nm wavelength. The threshold current and slope efficiency of the prepared high-fill-factor QCW devices are 24 A and 1.25 A/W, respectively, and a maximum wall-plug efficiency of 51% has been achieved.

引用

页码：6845 / 6848

页数：4

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