Light enhancement of Al nanoclusters embedded in Al-doped ZnO films of GaN-based light-emitting diodes

被引：6

作者：

Lee, Ching-Ting ^{[2
,3
]}

Chou, Ying-Hung ^{[2
,3
]}

Yan, Jheng-Tai ^{[2
,3
]}

Lee, Hsin-Ying ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Electroopt Engn, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Adv Optoelect Technol Ctr, Tainan 701, Taiwan

[3] Natl Cheng Kung Univ, Ctr Micronano Sci & Technol, Tainan 701, Taiwan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2009年 / 27卷 / 04期

关键词：

aluminium; gallium compounds; II-VI semiconductors; light emitting diodes; metal clusters; nanostructured materials; semiconductor thin films; sputter deposition; transmission electron microscopy; wide band gap semiconductors; zinc compounds; N-TYPE GAN; OHMIC CONTACTS; LAYER; OUTPUT; IMPROVEMENT; POWER;

D O I：

10.1116/1.3167370

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The aluminum (Al)-doped ZnO (AZO) films embedded with Al nanoclusters were employed to enhance the light output power of III-nitride-based light-emitting diodes (LEDs). The ZnO and Al targets were sputtered using a magnetron cosputtering system. Al nanoclusters embedded in AZO films were found in the AZO films deposited with Al dc power of 10 W and ZnO rf power of 100 W using high resolution transmission electron microscopy. An increase of 20% in the light output power of the GaN-based LEDs with AZO films embedded with Al nanoclusters can be obtained compared to the conventional LEDs operated at 500 mA.

引用

页码：1901 / 1903

页数：3

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