New approach for thermal investigation of a III-V power transistor

被引：0
|
作者：
Fontaine, M. [1 ]
Joubert, E. [1 ]
Latry, O. [1 ]
Dherbecourt, P. [1 ]
Ketata, M. [1 ]
机构：
[1] Univ Rouen, LEMI, F-76821 Mont St Aignan, France
来源：
14TH INTERNATIONAL WORKSHOP ON THERMAL INVESTIGATION OF ICS AND SYSTEMS | 2008年
关键词：
D O I：
10.1109/THERMINIC.2008.4669873
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper is presented a new method for characterisation of temperature of AlGaN - GaN transistor. An ellipsometer is also explained for measure of refractive index and so propagation time constant.
引用
收藏
页码：26 / 30
页数：5
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