Lattice location and annealing behavior of Mn implanted GaN

Gallium nitride (GaN) is a direct wide-band-gap semiconductor material, which can be used to produce blue-light-emitting diodes and lasers, high-temperature and high-power devices. While manganese (Mn) represents a potential acceptor in GaN, Mn-doped GaN may form an interesting diluted magnetic semiconductor. In this study, GaN was implanted at room temperature using 180 keV Mn+ ions to fluences ranging from 5 x 10(15) to 3 x 10(16) cm(-2). Subsequent annealing was performed in a flowing N-2 ambient, at 1050 degreesC for 12 min. The damage buildup and removal, as well as the lattice site location of Mn in GaN was studied by using Rutherford backscattering/channeling combined with particle induced X-ray emission. The angular scans around the <0001> and <10 (1) over bar1> axial directions indicate that Mn mainly occupies substitutional Ga sites. During the thermal treatment, no significant redistribution of the implanted Mn ions was found. (C) 2002 Elsevier Science B.V. All rights reserved.