Low-temperature power device: A new poly-Si high-voltage LDMOS with excimer laser crystallization

被引：7

作者：

Chang, FL ^{[1
]}

Lin, MJ ^{[1
]}

Liaw, CW ^{[1
]}

Cheng, HC ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 08期

关键词：

excimer laser crystallization (ELC); high-voltage thin-film transistor (HVTFT); lateral double diffused MOS (LDMOS); low-temperature polycrystalline silicon (LTPS);

D O I：

10.1109/LED.2004.831590

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new low-temperature polysilicon high-voltage LDMOS (LTPS HVLDMOS) using excimer laser crystallization has been proposed for the first time. However, in order to enhance UPS HVLDMOS characteristics, there are two starting points: 1) integrate the thin-film technology with the power device, and 2) clarify the requirement of excimer laser treatment for low-temperature power devices. As the result, the on/off current ratio after laser treatment is improved over 10(6) times than that before laser treatment at L-drift = 15 mum and V-ds = 25 V. The LTPS HVLDMOS after laser treatment also demonstrates the better tradeoff between the specific on resistance and breakdown voltage against the previous high-voltage thin-film transistors (HVTFTs) by solid-phase crystallization-such as semi-insulating (SI), metal field-plated, and offset-drain HVTFTs.

引用

页码：547 / 549

页数：3

共 12 条

[1] TEMPERATURE-DEPENDENCE OF THE ANOMALOUS LEAKAGE CURRENT IN POLYSILICON-ON-INSULATOR MOSFETS [J].

BHATTACHARYA, SS ;

BANERJEE, SK ;

NGUYEN, BY ;

TOBIN, PJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (02) :221-227

[2]

CHUANG TC, 1990, SID 90, P508

[3]

CLOUGH FJ, 1997, POWER SEMICOND DEVIC, P321

[4] Polycrystalline silicon thin-film transistors: A continuous evolving technology [J].

Fortunato, G .

THIN SOLID FILMS, 1997, 296 (1-2) :82-90

[5] Extraction of trap states at the oxide-silicon interface and grain boundary for polycrystalline silicon thin-film transistors [J].

Kimura, M ;

Nozawa, R ;

Inoue, S ;

Shimoda, T ;

Lui, BOK ;

Tam, SWB ;

Migliorato, P .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (9A) :5227-5236

[6]

Krishnan S, 2002, INT CONF MICROELECTR, P155, DOI 10.1109/MIEL.2002.1003163

[7]

Lin C. W., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P305, DOI 10.1109/IEDM.1999.824157

[8] An investigation of bias temperature instability in hydrogenated low-temperature polycrystalline silicon thin film transistors [J].

Lin, CW ;

Tseng, CH ;

Chang, TK ;

Chang, YH ;

Chu, FT ;

Lin, CW ;

Wang, WT ;

Cheng, HC .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (09) :5517-5522

[9] A review of RESURF technology [J].

Ludikhuize, AW .

12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS, 2000, :11-18

[10] CHARACTERISTICS OF OFFSET-STRUCTURE POLYCRYSTALLINE-SILICON THIN-FILM TRANSISTORS [J].

TANAKA, K ;

ARAI, H ;

KOHDA, S .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (01) :23-25

← 1 2 →