Characterization of DC-Stress-Induced Degradation in Bridged-Grain Polycrystalline Silicon Thin-Film Transistors

被引：15

作者：

Zhang, Meng ^{[1
]}

Zhou, Wei ^{[1
]}

Chen, Rongsheng ^{[1
]}

Wong, Man ^{[1
]}

Kwok, Hoi-Sing ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, State Key Lab Adv Displays & Optoelect Technol, Hong Kong, Hong Kong, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 09期

关键词：

Bridged grain (BG); hot carrier (HC); negative bias temperature instability (NBTI); polycrystalline silicon (poly-Si); self-heating (SH); thin-film transistors (TFTs); POLY-SI TFTS; BIAS TEMPERATURE INSTABILITY; HEATING-RELATED INSTABILITY; MODEL;

D O I：

10.1109/TED.2014.2341676

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, dc-stress-induced degradation in bridged-grain (BG) polycrystalline silicon (poly-Si) thin-film transistors (TFTs) is systemically characterized and investigated. Compared with normal poly-Si TFTs, BG poly-Si TFTs exhibit better hot-carrier (HC) reliability, better self-heating (SH) reliability, and better negative bias temperature (NBT) instability. Resulting from the heavily doped BG lines inside the active channel, lateral electric field reduction at the drain side, Joule heat diffusion enhancement at the channel length direction, and boron-hydrogen bond formation at interface/grain boundaries are, respectively, responsible for the improved HC reliability, SH reliability, and NBT reliability in BG poly-Si TFTs. In addition, stress V-g-dependent HC degradation with fixed stress V-d, stress power density-dependent SH degradation, and vertical electrical field-dependent NBT degradation are also examined in both normal poly-Si TFTs and BG poly-Si TFTs. All test results indicate that such high-performance and highly reliable BG poly-Si TFT has a great potential for system-on-panel application.

引用

页码：3206 / 3212

页数：7

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