Cathodoluminescence and scanning transmission electron microscopy study of InGaN/GaN quantum wells in core-shell GaN nanowires

被引：13
作者：
Yi, Wei [1 ,3 ]
Uzuhashi, Jun [1 ,4 ]
Chen, Jun [1 ,3 ]
Kimura, Takashi [1 ,3 ]
Kamiyama, Satoshi [2 ]
Takeuchi, Tetsuya [2 ]
Ohkubo, Tadakatsu [1 ,4 ]
Sekiguchi, Takashi [1 ,5 ]
Hono, Kazuhiro [1 ,4 ]
机构：
[1] Natl Inst Mat Sci, Ctr GaN Characterizat & Anal, Res Network & Facil Serv Div, Tsukuba, Ibaraki 3050047, Japan
[2] Meijo Univ, Nagoya, Aichi 4688502, Japan
[3] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan
[4] Natl Inst Mat Sci, Res Ctr Magnet & Spintron Mat, Tsukuba, Ibaraki 3050047, Japan
[5] Tsukuba Univ, Tsukuba, Ibaraki 3058577, Japan
来源：
APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 08期
关键词：
LIGHT-EMITTING-DIODES; NANORODS;
D O I：
10.7567/1882-0786/ab2e37
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
InGaN/GaN quantum wells (QWs) on GaN nanowire are expected for applications in high efficiency optoelectronic devices. To improve efficiency, it is important to clarify the relation between optical and structural properties. A systematical optical and structural characterization of QWs in core-shell GaN nanowires is performed by cathodoluminescence and scanning transmission electron microscopy. The QWs grown on the m-facet show varied optical behavior with respect to height position: main-body region (2.82 similar to 3.10 eV), upper region (3.26 eV), and corner region (2.88 similar to 3.20 eV). The variant luminescence behaviors are attributed to interface quality and In diffusion. (C) 2019 The Japan Society of Applied Physics
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页数：5
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